Wide bandgap, (WBG), semiconductors differ significantly from conventional semiconductors since they have a larger bandgap. A bandgap refers to the energy difference in semiconductors between the top of the valence band and the bottom of the conduction band. The larger distance allows wide bandgap semiconductor power devices to operate at higher voltages, temperatures, and frequencies.

Wide band gap semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) are the ideal choice when looking for next generation of efficient power converter switches. However, each material offers certain advantages over the other. For instance, silicon carbide power semiconductors offer excellent voltage blocking for applications starting at 650V and provides even more benefits the higher the voltage.

The key for the next essential step towards an energy-efficient world lies in the use of these new WBG power electronics materials that allow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together.

AOS is offering the broadest product and technology portfolio including silicon, silicon carbide gallium-nitride-based devices. As the leading power supplier with more than two decades of heritage in silicon carbide (SiC) and gallium nitride (GaN) technology development, AOS Technologies caters to the need for smarter, more efficient energy generation, transmission, and consumption. Their experts understand what is needed to reduce system complexity, leading to decreased system cost and size in low- to mid- and high-power systems.

Do you know more about AOS's product uses, technical documents, and solutions related to Wide Bandgap (SiC/GaN)? Then quickly get in touch with AOS Distributor - NANHUANG!